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PHOTOTRANSISTOR
L-51P3C
Features
!MECHANICALLY AND SPECTRALLY MATCHED TO
Description
Made with NPN silicon phototransistor chips.
THE L-53 SERIES INFRARED EMITTING LED LAMP.
!WATER
CLEAR LENS.
Package Dimensions
Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice.
SPEC NO: KDA0531 APPROVED:J.LU
REV NO: V.1 CHECKED:
DATE: SEP/17/2001 DRAWN:X.Q.ZHENG
PAGE: 1 OF 2
Absolute Maximum Rating at T)=25C
Par am et er Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Power Dissipation at (or below) 25C Free Air Temperature Operating Temperature Range Storage Temperature Range Lead Soldering Temperature(4mm For 5sec) Max im u m Rat in g s 30V 5V 100mW -40C ~ +85C -40C ~ +85C 260C
Electrical And Radiant Characteristics at T)=25C
Sy m b o l V BR C EO V BR EC O VCE (SAT) ICEO TR TF Par am et er Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Collector-to-Emitter Saturation Voltage Collector Dark Current Rise Time (10% to 90%) Fall Time (90% to 10%) Min . 30 5 Ty p . 3 3 Max . 0.8 100 Un it V V V nA us us Tes t Co n d ic t io n I C=100uA Ee=0mW/cm2 I E=100uA Ee=0mW/cm2 I C=2mA Ee=20mW/cm2 VCE=10V Ee=0mW/cm2 VCE=5V IC=1mA RL=1K
I (ON)
On State Collector Current
0.1
0.5
-
mA
VCE=5V, Ee=1mW/cm2, =940nm
SPEC NO: KDA0531 APPROVED:J.LU
REV NO: V.1 CHECKED:
DATE: SEP/17/2001 DRAWN:X.Q.ZHENG
PAGE: 2 OF 2

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